ALD110802数据手册ALD中文资料规格书

描述 Description

GENERAL DESCRIPTION
ALD110802/ALD110902 are high precision monolithic quad/dual enhance ment mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.FEATURES
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.20V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th)match (VOS) to 10mV
• High input impedance — 1012 Ω typical
• Positive, zero, and negative VGS(th)temperature coefficient
• DC current gain 108
• Low input and output leakage currents

特性 Features

• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.20V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th)match (VOS) to 10mV
• High input impedance — 1012 Ω typical
• Positive, zero, and negative VGS(th)temperature coefficient
• DC current gain 108
• Low input and output leakage currents