BL-HG636G-TRB

TopEmittingSMTLEDComponents

Features: 1.EmittedColor:Green 2.LensAppearance:WaterClear 3.Mono-colortype. 4.1.6x0.8x0.4mm(0603)standardpackage 5.SuitableforallSMTassemblymethods. 6.Compatiblewithinfraredandvaporphase reflowsolderprocess. 7.Compatiblewithautomaticplacement equipment. 8

BUF636A

SiliconNPNHighVoltageSwitchingTransistor

Features ●Simple-sWitch-OffTransistor(SWOT) ●HIGHSPEEDtechnology ●Planarpassivation ●100kHzswitchingrate ●Verylowswitchinglosses ●Verylowdynamicsaturation ●Verylowoperatingtemperature ●OptimizedRBSOA ●Highreversevoltage Applications Electroniclampballas

BUF636A

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=450V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.2V(Max)@IC=0.8A APPLICATIONS ·Electroniclampballastcircuits ·Switch-modepowersupplies

C636

500WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •3Ux42TEx166.5mm •Weight:3.5kg

CPL636

SILICONPLANAREPITAXIALTRANSISTORS

CT636CYF

PowerInductors-Shielded

CT636FYF

PowerInductors-Unshielded

CTN636

ComplementaryTransistorsinPlasticPackageforDriverStageofAudioAmplifier

CTN635,637,639NPNSILICONPLANAREPITAXIALTRANSISTORS CTN636,638,640PNPSILICONPLANAREPITAXIALTRANSISTORS

CWST636

DATASUBJECTTOCHANGEWITHOUTNOTLCE

D636

NPNTransistor