SSM3J145TU

Marking：AJN；Package：UFM；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance RDS(ON)=260mΩ(max)(@VGS=-1.5V) RDS(ON)=180mΩ(max)(@VGS=-1.8V) RDS(ON)=132mΩ(max)(@VGS

SSM3J371R

Marking：AJO；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=150mΩ(max)(@VGS=-1.5V) RDS(ON)=100mΩ(max)(@VGS=-1.8V) RDS(ON)=75mΩ(max)(@VG

SSM3J372R

Marking：AJJ；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.8-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance RDS(ON)=144mΩ(max)(@VGS=-1.8V) RDS(ON)=72.0mΩ(max)(@VGS=-2.5V) RDS(ON)=50.0mΩ(max)(@V

SSM3J374R

Marking：AJA；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4.0-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance RDS(ON)=71mΩ(max)(@VGS=-10V) RDS(ON)=105mΩ(max)(@VGS=-4.5V) RDS(ON)=136mΩ(max)(@VGS=

SSM3J375F

Marking：AJE；Package：2-3F1S；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=311mΩ(max)(@VGS=-1.5V) RDS(ON)=231mΩ(max)(@VGS=-1.8V) RDS(ON)=179mΩ(max)(@VGS=-2.5V)

SSM3J377R

Marking：AJG；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@V

SSM6J422TU

Marking：AJH；Package：UF6；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=99.6mΩ(max)(@VGS=-1.5V) RDS(ON)=67.8mΩ(max)(@VGS=-1.8V) RDS(ON)=51.4mΩ(m

SSM6J422TULF

Marking：AJH；Package：UF6；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=99.6mΩ(max)(@VGS=-1.5V) RDS(ON)=67.8mΩ(max)(@VGS=-1.8V) RDS(ON)=51.4mΩ(m

SSM6J422TULXGF

Marking：AJH；Package：UF6；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=99.6mΩ(max)(@VGS=-1.5V) RDS(ON)=67.8mΩ(max)(@VGS=-1.8V) RDS(ON)=51.4mΩ(m

SSM6J422TULXHF

Marking：AJH；Package：UF6；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.5-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=99.6mΩ(max)(@VGS=-1.5V) RDS(ON)=67.8mΩ(max)(@VGS=-1.8V) RDS(ON)=51.4mΩ(m