AIMZHN120R060M1T

CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=38AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

AIMBG120R060M1

FinaldatasheetCoolSiC™1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=38AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R060M1T

CoolSiC™AutomotiveMOSFET1200VinHDSOP-22-3package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=44AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMW120R060M1H

CoolSiC??Automotive1200VSiCTrenchMOSFET1200VG1SiliconCarbideMOSFET

AIMZH120R060M1T

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=38AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

IMBG120R060M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

IMW120R060M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

IMZ120R060M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltageforeasyandsimplegatedrive FullycontrollabledV/dt Robustbodydiodeforhardcommutation Temperatureindependentturn-offs