AIKB30N65DF5中文资料英飞凌数据手册PDF规格书

Features and Benefits:

High speed F5 technology offering:

• Best-in-Class efficiency in hard switching and resonant

topologies

• 650V breakdown voltage

• Low gate charge QG

• IGBT copacked with RAPID 1 fast and soft antiparallel diode

• Maximum junction temperature 175°C

• Dynamically stress tested

• Qualified according to AEC-Q101

• Green package (RoHS compliant)

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/