AIGW50N65H5数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.

特性 Features

•650V blocking voltage

•Max junction temperature 175°C

•Very low conduction and switching losses

•Very low junction and case temperature

•High power density design

•Positive temperature coefficient in V CEsat


优势:
•50V higher blocking voltage

•Highest efficiency

•High device reliability

•Low temperature leads to less cooling efforts

•Less system costs

应用 Application

•Fast switching automotive applications
•On-board charger
•PFC
•DC-DC converter
•DC-AC converter

简介

AIGW50N65H5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AIGW50N65H5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。