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AH8115TE3VR中文资料创瑞科技数据手册PDF规格书

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厂商型号

AH8115TE3VR

功能描述

HALL SWITCH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

文件大小

535.08 Kbytes

页面数量

7

生产厂商

AITSEMI

中文名称

创瑞科技

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-1 20:00:00

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AH8115TE3VR规格书详情

DESCRIPTION

The AH8115 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in cellular flip-phones, with battery operating voltages of 2.0V-5.5V.

Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output

Voltage is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some μA.

The IC switching behavior is omnipolar, it can be switched on with either the north or south pole of a magnet.

AH8115 is higher sensitivity of magnetic induction than AH8113, it can be used in security systems、sensing magnet smaller occasions.

The AH8115 is available in TSOT-23 package.

FEATURES

 Micro power design

 2.0V to 5.5V battery operatio n

 High sensitivity and high stability of the

magnetic switching points

 High resistance to mechanical stress

 Digital output signal

 Switching for both poles of a magnet

(omnipolar)

 Not suitable for automotive application

 Operating temperature range

 T M IN ≤ T A ≤ T MAX 40°C ≤ T A ≤ 85°C

 Operating voltage range 2.0V ≤ V DD ≤ 6.0V

 Available in TSOT-23 p ackage

APPLICATION

 Mobile phones

 Notebook

 Portable electronic devices

供应商 型号 品牌 批号 封装 库存 备注 价格
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