Inverted Output Hall Effect Latch For High Temperature

文件：179.43 Kbytes 页数：6 Pages

ANACHIP

易亨电子

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

文件：168.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

文件：34.27 Kbytes 页数：6 Pages

PHI

PHI

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is housed in a very small 6-pin minimold package available on t

文件：66.33 Kbytes 页数：6 Pages

NEC

瑞萨