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AGR18060EF中文资料PDF规格书
AGR18060EF规格书详情
Introduction
The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.
Features
Typical EDGE performance:
1880 MHz, 26 V, IDQ = 500 mA
— Output power (POUT): 20 W.
— Power gain: 15 dB.
— Efficiency: 34.
— Modulation spectrum:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 2.
Typical performance over entire GSM band:
— P1dB: 60 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 52 typical.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continuous wave (CW) output power.
Large signal impedance parameters available.
产品属性
- 型号:
AGR18060EF
- 功能描述:
射频MOSFET电源晶体管 RF LDMOS Transistor
- RoHS:
否
- 制造商:
Freescale Semiconductor
- 配置:
Single
- 频率:
1800 MHz to 2000 MHz
- 增益:
27 dB
- 输出功率:
100 W
- 封装/箱体:
NI-780-4
- 封装:
Tray
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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107 |
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6000 |
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9 |
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8510 |
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