型号：2SA1797RU；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672U

文件：767.41 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

型号：MAX5054BATA+；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers

General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers source and sink up to 4A peak current. These devices feature a fast 20ns propagation delay and 20ns rise and fall times while driving a 5000pF capacitive load. Propagation delay time is minimized and matched between the inv

文件：429.57 Kbytes 页数：17 Pages

Maxim

美信

型号：MAX5054BATA+；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers

文件：279.84 Kbytes 页数：15 Pages

Maxim

美信

型号：MAX5054BATA+；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers TTL Logic Inputs 8-Pin TDFN and SO Packages

文件：267.32 Kbytes 页数：15 Pages

Maxim

美信

型号：MPM3805GQB；Package：QFN-12；6V Input, 0.6A Module Synchronous Step-Down Converter with Integrated Inductor

文件：890.42 Kbytes 页数：16 Pages

MPS

美国芯源

型号：X93156WM8I-2.7；Package：8LdMSOP；Single Digitally Controlled Potentiometer (XDCP?? Low Noise, Low Power, 3 wire Up/Down, 32 Taps

文件：403.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

型号：AGR18030EF；30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifi

文件：425.99 Kbytes 页数：9 Pages

TriQuint

型号：AGR18045E；45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifie

文件：432.22 Kbytes 页数：9 Pages

TriQuint

型号：AGR18060E；60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

文件：426.34 Kbytes 页数：9 Pages

TriQuint

型号：AGR18060EF；60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

文件：426.34 Kbytes 页数：9 Pages

TriQuint