AGB3312S24Q1中文资料ANADIGICS数据手册PDF规格书

PRODUCT DESCRIPTION

The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50Ω system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3312 requires a single +5 V supply, and typically consumes 0.4 Watts of power.

FEATURES

• On-chip Active Bias

• DC-7000 MHz Operation Bandwidth

• +42 dBm Output IP3 at 850 MHz

• 5 dB Noise Figure at 850 MHz

• 11 dB Gain

• +17 dBm P1dB

• SOT-89 Package

• Single +5 V Supply

• Case Temperature: -40 to +85 °C

APPLICATIONS

• Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems

• Fixed Wireless

• MMDS/WLL

• WLAN