50??High Linearity Low Noise Internally Biased Wideband Gain Block

PRODUCT DESCRIPTION The AGB3310 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching component

文件：288.11 Kbytes 页数：8 Pages

ANADIGICS

ANADIGICS, Inc

50??High Linearity Low Noise Internally Biased Wideband Gain Block

PRODUCT DESCRIPTION The AGB3310 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching component

文件：288.11 Kbytes 页数：8 Pages

ANADIGICS

ANADIGICS, Inc

50Ω High Linearity Low Noise Internally Biased Wideband Gain Block

Anadigics

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

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SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. ▼ Simple Drive Requirement ▼2.5V Gate Drive Capability ▼ Fas

文件：170.16 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子