AFV10700H数据手册恩XP中文资料规格书

描述 Description

These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.

特性 Features

• Internally input and output matched for broadband operation and ease of use
• Device can be used single-ended, push-pull, or quadrature configuration
• Qualified up to a maximum of 55 VDD operation
• High ruggedness, handles > 20:1 VSWR
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
• Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
• RoHS Compliant
• Included in our product longevity program with assured supply for a minimum of 15 years after launch.