GaAs E-pHEMT, pHEMT and FBAR technology

文件：191.35 Kbytes 页数：14 Pages

AVAGO

安华高

2.5-2.7 GHz WiMAX Coexistence Front End Module

文件：191.35 Kbytes 页数：14 Pages

BOARDCOM

博通

Package：44-SMD 模块；包装：剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频前端（LNA + PA） 描述：IC FRONT END MODULE WIMAX 44SMD

BOARDCOM

博通

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

文件：83.27 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

文件：315.61 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体