丝印：AF4；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：229.55 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4502C；Package：SOP-8；P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes 页数：8 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：509.08 Kbytes 页数：6 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：509.08 Kbytes 页数：6 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：509.08 Kbytes 页数：6 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：509.08 Kbytes 页数：6 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：509.08 Kbytes 页数：6 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable an

文件：149.2 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable an

文件：149.2 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable an

文件：149.2 Kbytes 页数：3 Pages

ANACHIP

易亨电子