SCH1333

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

SCH1333

P-ChannelPowerMOSFET

Features •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

SCH1333-TL-H

General-PurposeSwitchingDeviceApplications

SCH1333-TL-H

P-ChannelPowerMOSFET

Features •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

SMG1333

P-ChannelEnhancementModePowerMos.FET

SP1333

SP13338pF30kVBidirectionalDiscreteTVS

Description TheSP1333back-to-backdiodesarefabricatedina proprietarysiliconavalanchetechnology.Thesediodes provideahighESD(electrostaticdischarge)protection levelforelectronicequipment.TheSP1333TVScansafely absorbrepetitiveESDstrikesabovethemaximumcontact disc

SSM1333GU

P-channelEnhancement-modePowerMOSFET

ST1333

6-ContactMemoryCardIC272-bitEEPROMwithAdvancedSecurityMechanisms

DESCRIPTION ThemembersoftheST1331/1333/1353familyareprincipallydesignedforuseinprepaidPhonecardapplications.Eachisa272-bitEEPROMdevice,withassociatedsecuritylogicandspecialfusestocontrolmemoryaccess.Thememoryisarrangedasamatrixof34x8cells,accessedin

ST1333

MemoryMicromodulesGeneralInformationforD1,D2andCPackaging

DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi

T1333

TRIANGULARTYPE

LEDLAMP(TRIANGULARTYPE)