60-Series General Oscillator Specifications

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AEL

N-Ch 100V Fast Switching MOSFETs

 GENERAL DESCRIPTION The AM6011 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Com

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AXELITE

亚瑟莱特

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

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ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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ADPOW