Fanless Design with VIA Eden??667MHz/ C3??1GHz Processor

文件：394.56 Kbytes 页数：2 Pages

AAEON

研扬科技

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V

文件：115.11 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V Dual N-Channel MOSFET

文件：523.47 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

文件：1.87148 Mbytes 页数：4 Pages

KEXIN

科信电子