AMDLH4020S

MoldedInductor(MetalAlloy)

Features •Shieldedconstruction •Softsaturation •LowDCR,HighEfficiency •Designedforswitchingfrequenciesbetween100KHz-2MHz Applications •DC/DCSwitchingconverters •PowersuppliesforNotebooks,workstations,andServers •LowProfileapplications •Highcurrent,transient

AMPLH4020S

MoldedInductor(Carbonyl)

Features •Shieldedconstruction •Softsaturation •LowDCR,HighEfficiency •Designedforswitchingfrequenciesbetween100KHz-2MHz Applications •DC/DCSwitchingconverters •PowersuppliesforNotebooks,workstations,andServers •LowProfileapplications •Highcurrent,transientloadappl

AMR4020

HighAccuracyAnalogMagneticScaleSensor

Description TheAMR40X0seriesmagneticgratesensors integratetwopush-pullWheatstonebridges,each ofwhichcontainsfourhigh-sensitivityanisotropic magnetoresistance(AMR)sensingelements.Sucha designeffectivelycompensatestemperaturedriftto ensurehighaccuracyunderwidetemp

AMR4020D

HighAccuracyAnalogMagneticScaleSensor

Description TheAMR40X0seriesmagneticgratesensors integratetwopush-pullWheatstonebridges,each ofwhichcontainsfourhigh-sensitivityanisotropic magnetoresistance(AMR)sensingelements.Sucha designeffectivelycompensatestemperaturedriftto ensurehighaccuracyunderwidetemp

APT4020

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT4020AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

APT4020BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT4020BN

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

APT4020BNR

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

APT4020BVFR

POWERMOSVFREDFET

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi