(SQUARE STEM WITH CAP OPTIONS) MECHANICAL CONTACT STYLE

FEATURES Positive tactile feedback. Ultraminiature structure suitable for high density mounting. Economic but high reliability. Insert molded terminals prevent flux build-up during soldering.

文件：237.58 Kbytes 页数：5 Pages

APEM

埃斐

(SQUARE STEM WITH CAP OPTIONS) MECHANICAL CONTACT STYLE

FEATURES Positive tactile feedback. Ultraminiature structure suitable for high density mounting. Economic but high reliability. Insert molded terminals prevent flux build-up during soldering.

文件：237.58 Kbytes 页数：5 Pages

APEM

埃斐

Electrostatic Discharge Prevention-Input Protection

文件：56.26 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

VHF POWER MOSFET

DESCRIPTION: The ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG= 11 dB Typical at 225 MHz • 5:1Load VSWR Capability • Omnigold™ metalization system

文件：22.49 Kbytes 页数：1 Pages

ASI

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

文件：105.14 Kbytes 页数：13 Pages

PHI

PHI