IRF7476

PowerMOSFET(Vdss=12V,Id=15A)

Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequency3.3Vand5VinputPoint- of-LoadSynchronousBuckConvertersfor NetcomandComputingApplications. ●PowerManagementforNetcom, Computingan

IRF7476

N-ChannelMOSFET

■Features ●VDS(V)=12V ●ID=15A(VGS=10V) ●RDS(ON)

IRF7476-HF

N-ChannelMOSFET

IRF7476PBF

HEXFETPowerMOSFET(VDSS=12V,RDS(on)max=8.0m廓@VGS=4.5V,ID=15A)

Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequency3.3Vand5VinputPoint-of-Load SynchronousBuckConvertersfor NetcomandComputingApplications. ●PowerManagementforNetcom, Computingand

IRF7476TR

HighFrequency3.3Vand5VinputPoint-of-LoadSynchronousBuckConvertersfor

Applications HighFrequency3.3Vand5VinputPointof- LoadSynchronousBuckConvertersfor NetcomandComputingApplications. PowerManagementforNetcom, ComputingandPortableApplications. Lead-Free

IRF7476TR

MOSFET

Benefits VDS(V)=12V RDS(ON)

N7476F

DUALJKFLIP-FLOP

[Signetics]

N7476N

DUALJKFLIP-FLOP

[Signetics]

PJC7476

100VN-ChannelEnhancementModeMOSFET??ESDProtected

PJC7476-AU

100VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@300mA