丝印：ADS803E；Package：SSOP；12-Bit, 5MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES HIGH SFDR: 82dB at NYQUIST HIGH SNR: 69dB LOW POWER: 115mW LOW DLE: 0.25LSB FLEXIBLE INPUT RANGE OVER-RANGE INDICATOR APPLICATIONS IF AND BASEBAND DIGITIZATION CCD IMAGING SCANNERS TEST INSTRUMENTATION DESCRIPTION The ADS803 is a high-speed, high dynamic range, 12-bit pip

文件：356.83 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ADS803E；Package：SSOP(DB)；12-Bit, 5MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES HIGH SFDR: 82dB at NYQUIST HIGH SNR: 69dB LOW POWER: 115mW LOW DLE: 0.25LSB FLEXIBLE INPUT RANGE OVER-RANGE INDICATOR APPLICATIONS IF AND BASEBAND DIGITIZATION CCD IMAGING SCANNERS TEST INSTRUMENTATION DESCRIPTION The ADS803 is a high-speed, high dynamic range, 12-bit pip

文件：360.35 Kbytes 页数：18 Pages

TI

德州仪器

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

文件：79.67 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

文件：60.48 Kbytes 页数：8 Pages

NEC

瑞萨