ADRF5141BCCZN-R7中文资料亚德诺数据手册PDF规格书

GENERAL DESCRIPTION

The ADRF5141 is a reflective, SPDT switch manufactured in the

silicon process. The ADRF5141 is used in transmit and receive

applications with an integrated power limiter on the receive path.

The ADRF5141 operates from 6 GHz to 12 GHz. The RX arm with

the integrated power limiter has a flat leakage of 17 dBm with a low

insertion loss of 1.4 dB at 8 GHz to 11 GHz. The TX arm has an

insertion loss of 0.9 dB at 8 GHz to 11 GHz.

The ADRF5141 draws a low current of 13 μA on the positive supply

of +3.3 V and 360 μA on the negative supply of −3.3 V. The device

employs complementary metal-oxide semiconductor (CMOS)-/low

voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5141 requires no additional driver circuitry, making it

an ideal alternative to gallium nitride (GaN) and PIN diode-based

switches.

The ADRF5141 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant,

land grid array (LGA) package and can operate from −40°C to +105°C.

FEATURES

► High-power transmit and receive switch with an integrated power

limiter on receive path

► Frequency range: 6 GHz to 12 GHz

► Reflective 50 Ω design

► Low insertion loss

► TX to ANT: 0.9 dB at 8 GHz to 11 GHz

► ANT to RX: 1.4 dB at 8 GHz to 11 GHz

► High isolation: 55 dB typical for TX to RX when TX selected

► High-power handling (TCASE = 50°C)

► Input at TX: pulsed 40 dBm, >100 ns pulse width at 15 duty

cycle

► Input at ANT: pulsed 40 dBm, >100 ns pulse width at 15

duty cycle

► RX flat leakage: 17 dBm

► High linearity

► Input P0.1dB at TX arm: 41 dBm

► Fast switching time: 50 ns

► Fast response and recovery time: <10 ns

► Dual-supply, with no low-frequency spurious

► Positive control interface: CMOS-/LVTTL-compatible

► 20-lead, 3 mm × 3 mm LGA package

► Pin compatible with the ADRF5144

APPLICATIONS

► X-band communications and radars

► Electronic warfare

► Satellite communications

► GaN and PIN diode replacement