ADRF5032BCCZN-R7中文资料亚德诺数据手册PDF规格书

GENERAL DESCRIPTION

The ADRF5032 is a reflective, single-pole double-throw (SPDT)

switch manufactured using the silicon process. The ADRF5032

operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0

dB and isolation of higher than 32 dB. The device has a RF input

power handling capability of 24 dBm for both through paths and 21

dBm for hot switching.

The ADRF5032 requires dual supply voltages of ±3.3 V. The device

employs CMOS and low-voltage transistor logic (LVTTL) compatible

control.

The ADRF5032 is packaged in a 12-terminal, 2.5 mm × 2.5 mm,

RoHS-compliant, land grid array (LGA). The ADRF5032 operates

from −40°C to +105°C.

FEATURES

► Ultra-wideband frequency range: 1 GHz to 60 GHz

► Reflective design

► Low insertion loss

► 1.3 dB typical up to 40 GHz

► 1.9 dB typical up to 55 GHz

► 2.0 dB typical up to 60 GHz

► High isolation

► 43 dB typical up to 40 GHz

► 37 dB typical up to 55 GHz

► 32 dB typical up to 60 GHz

► High input linearity

► P0.1dB: 24 dBm typical

► IP3: 45 dBm typical

► High-RF power handling

► Through path: 24 dBm

► Hot switching path: 21 dBm

► CMOS/LVTTL compatible

► No low-frequency spur

► RF switching time: 15 ns

► RF settling time (50 VCTRL to 0.1 dB of RF output): 35 ns

► Dual-supply operation: ±3.3 V

► 12-terminal, 2.5 mm × 2.5 mm, RoHS-compliant, LGA package

APPLICATIONS

► Industrial scanners

► Test and instrumentation

► Cellular infrastructure: 5G mmWave

► Military radios, radars, electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)