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ADR434

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:868.03 Kbytes 页数:24 Pages

AD

亚德诺

ADR434

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:1.58821 Mbytes 页数:24 Pages

AD

亚德诺

ADR434

Ultralow Noise XFET Voltage References ith Current Sink and Source Capability

文件:1.58821 Mbytes 页数:24 Pages

AD

亚德诺

ADR434

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

文件:1.58821 Mbytes 页数:24 Pages

AD

亚德诺

ADR434

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

文件:1.58821 Mbytes 页数:24 Pages

AD

亚德诺

ADR434

超低噪声、4.096V XFET®基准电压源,具有吸电流和源电流能力

ADR430/ADR431/ADR433/ADR434/ADR435是XFET®系列基准电压源,具有低噪声、高精度和低温度漂移性能。利用ADI公司的温度漂移曲率校正技术和外加离子注入场效应管(XFET)技术,可以使ADR430/ADR431/ADR433/ADR434/ADR435电压随温度变化的非线性度降至最小。\n\n 与嵌入式齐纳基准电压源相比,XFET基准电压源能以更低的电流(800 μA)和更小的电源电压裕量(2 V)工作。嵌入式齐纳基准电压源需要5 V以上的裕量才能工作。ADR430/ADR431/ADR433/ADR434/ADR435 XFET基准电压源是一个适合5 • 低噪声(0.1 Hz至10.0 Hz): 3.5 µV p-p(2.5 V输出) \n\n• 无需外部电容\n\n• 低温度系数\nA级: 10 ppm/℃(最大值)\nB级: 3 ppm/℃(最大值) \n\n• 负载调整率: 15 ppm/mA \n\n• 线性调整率: 20 ppm/V \n\n• 欲了解更多特性,请参考数据手册;

ADI

亚德诺

ADR434A

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:868.03 Kbytes 页数:24 Pages

AD

亚德诺

ADR434A

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:1.58821 Mbytes 页数:24 Pages

AD

亚德诺

ADR434AR

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:868.03 Kbytes 页数:24 Pages

AD

亚德诺

ADR434ARM

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件:868.03 Kbytes 页数:24 Pages

AD

亚德诺

详细参数

  • 型号:

    ADR434

  • 制造商:

    AD

  • 制造商全称:

    Analog Devices

  • 功能描述:

    Ultralow Noise XFET Voltage References with Current Sink and Source Capability

供应商型号品牌批号封装库存备注价格
AD
24+
9000
5000
原装现货
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ADI
22+
N/A
60000
专注配单,只做原装现货
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ADI
23+
N/A
5000
专注配单,只做原装进口现货
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ADI/亚德诺
25+
SOP8
25
原装正品,欢迎来电咨询!
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AnalogDevices
8-SOIC
1200
AD代理旗下一级分销商,主营AD全系列产品
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AD
25+
SOP8
200
主打产品,长备大量现货
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AD
SOP8
07+
61
全新原装进口自己库存优势
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ADI
17+
SOP8
6200
100%原装正品现货
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ADI
330
sop8
10
自己公司全新库存绝对有货
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ADI
25+
SOP8
2
百分百原装正品 真实公司现货库存 本公司只做原装 可
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更多ADR434供应商 更新时间2025-12-10 8:01:00