Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：868.03 Kbytes 页数：24 Pages

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Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：1.58821 Mbytes 页数：24 Pages

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亚德诺

Ultralow Noise XFET Voltage References ith Current Sink and Source Capability

文件：1.58821 Mbytes 页数：24 Pages

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亚德诺

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

文件：1.58821 Mbytes 页数：24 Pages

AD

亚德诺

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

文件：1.58821 Mbytes 页数：24 Pages

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超低噪声、3.0V XFET®基准电压源，具有吸电流和源电流能力

ADR430/ADR431/ADR433/ADR434/ADR435是XFET®系列基准电压源，具有低噪声、高精度和低温度漂移性能。利用ADI公司的温度漂移曲率校正技术和外加离子注入场效应管(XFET)技术，可以使ADR430/ADR431/ADR433/ADR434/ADR435电压随温度变化的非线性度降至最小。 与嵌入式齐纳基准电压源相比，XFET基准电压源能以更低的电流(800 μA)和更小的电源电压裕量(2 V)工作。嵌入式齐纳基准电压源需要5 V以上的裕量才能工作。ADR430/ADR431/ADR433/ADR434/ADR435 XFET基准电压源是适合5 V系统的低噪 • 低噪声（0.1 Hz至10.0 Hz）： 3.5 µV p-p（2.5 V输出） \n\n• 无需外部电容\n\n• 低温度系数\nA级： 10 ppm/℃（最大值）\nB级： 3 ppm/℃（最大值） \n\n• 负载调整率： 15 ppm/mA \n\n• 线性调整率： 20 ppm/V;

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Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：868.03 Kbytes 页数：24 Pages

AD

亚德诺

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：1.58821 Mbytes 页数：24 Pages

AD

亚德诺

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：868.03 Kbytes 页数：24 Pages

AD

亚德诺

Ultralow Noise XFET Voltage References with Current Sink and Source Capability

GENERAL DESCRIPTION The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change ver

文件：868.03 Kbytes 页数：24 Pages

AD

亚德诺