Low Noise Micropower Precision Voltage Reference

GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improveme

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Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

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Low Noise, Micropower 5.0 V Precision Voltage Reference

文件：261.98 Kbytes 页数：12 Pages

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Ultralow Noise, High Accuracy

文件：993.6 Kbytes 页数：32 Pages

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低噪声、微功耗、5.0 V精密基准电压源

ADR293是一款低噪声、微功耗、精密基准电压源，采用XFET®（外加离子注入场效应管）基准电压源电路。与传统的带隙和嵌入式齐纳二极管基准电压源相比，XFET架构在性能方面有明显改进。具体包括：工作电流相同时，电压噪声输出仅为带隙基准电压源的1/4；极低的超线性温度漂移；低热滞特性；以及出色的长期稳定性。\nADR293串联基准电压源可利用6.0 V电源提供稳定、精确的输出电压。最大静态电流仅15μA，因此该器件是电池供电仪器仪表的理想选择。ADR293分为三种电气等级，其初始输出精度分别为±3 mV、±6 mV和±10 mV。三种等级产品的温度系数分别为8 ppm/°C、15 ppm/°C和 • 电源电压范围：6.0 V至15 V\n• 电源电流：15 μA（最大值）\n• 低噪声：15 μV p-p典型值（0.1 Hz至10 Hz）\n• 高输出电流：5 mA \n• 与REF02/REF19x引脚兼容\nADR293-EP支持防务和航空航天应用（AQEC标准）• 下载ADR293-EP 数据手册 (pdf)\n• 军用温度范围（−55°C至+125°C）\n• 受控制造基线 \n• 唯一封装/测试厂\n• 唯一制造厂 \n• 增强型产品变更通知\n• 认证数据可应要求提供\n• V62/12641 DSCC图纸号;

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Low Noise, Micropower 5.0 V Precision Voltage Reference

GENERAL DESCRIPTION The ADR293-EP is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improv

文件：182.99 Kbytes 页数：12 Pages

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Low Noise Micropower Precision Voltage Reference

GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improveme

文件：159.25 Kbytes 页数：11 Pages

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Low Noise Micropower Precision Voltage Reference

GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improveme

文件：159.25 Kbytes 页数：11 Pages

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亚德诺

Low Noise Micropower Precision Voltage Reference

GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improveme

文件：159.25 Kbytes 页数：11 Pages

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亚德诺

Low Noise, Micropower 5.0 V Precision Voltage Reference

GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improveme

文件：261.97 Kbytes 页数：12 Pages

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