ADS802U.B

12-Bit,10MHzSamplingANALOG-TO-DIGITALCONVERTER

FEATURES NOMISSINGCODES LOWPOWER:250mW INTERNALREFERENCE WIDEBANDTRACK-AND-HOLD:65MHz SINGLE+5VSUPPLY APPLICATIONS IFANDBASEBANDDIGITIZATION DATAACQUISITIONCARDS TESTINSTRUMENTATION CCDIMAGING Copiers Scanners Cameras VIDEODIGITIZING GAMMACAMERAS DESCRIPTION

AEV802

HIGHVOLTAGEANDCURRENTCUT-OFFCAPACITYINACOMPACTPACKAGE

FEATURES •Controloflargevoltagesandcurrents Therelayshaveasealedconstructionthatisfilledwithahydrogengascompound,anduseapermanentmagnettoestablishamagneticpathforthearc. Thisallowsthemtoswitchhigh-levelDCvoltagesofupto400VDC. •Compactsizea

AIZ-802

AIZSeriesPassive10-TapDIP/SMDDelayModules

AMZ-802

AMZ&AMYSeriesPassive5-TapDIP/SMDDelayModules

AOP802

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP802usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAOP802isPb-free(meetsROHS&Sony259specifications).AOP802LisaGreenProductorder

AOP802L

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP802usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAOP802isPb-free(meetsROHS&Sony259specifications).AOP802LisaGreenProductorder

APT802RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT802RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

APT802RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

APT802RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon