CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

CA3082M

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

CDT3082

12餘듣Þ若싧츣?귛솳?㎩댍IC

CEM3082

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CHM3082JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CN3082

Multi-ChemistryBatteryChargerforSolar-PoweredSystems

CT3082

600V/800VZeroCross6-PinPhototriacOptocoupler

CT3082

6PinZeroCrossTRIACDriverCoupler

CT3082

600V/800VZeroCross6-PinDMC-Isolator®PhototriacOptocoupler

Features Highisolation5000VRMS PeakBreakdownVoltage 600V–CT3061,CT3062,CT3063 800V–CT3081,CT3082,CT3083 OperatingTemperaturerange-55°Cto100°C ExternalCreepage≥7.4mm DistanceThroughIsolation≥0.4mm ClearanceDistance≥7.5mm(S/SLType) ClearanceDistan

CT3082G

6PinZeroCrossTRIACDriverCoupler