BD235

LowvoltageNPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

BD235

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

BD235

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

BD235

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

BD235

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

BD235

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementarypairwithBD236. Applications Mediumpowerlinearandswitchingapplications.

BD235

SiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

BD235

SiliconNPNPowerTransistors

BD235

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy

BD235

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.