ADM20N10E

N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM20N10EusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

CJAC20N10

N-ChannelPowerMOSFET

D20N10E

20Amps,95VoltsN-CHANNELPowerMOSFET

DTU20N10

N-ChannelMOSFETusesadvancedtrenchtechnology

LMAK20N10

100VN-ChannelEnhancementModeMOSFET

ME20N10

N-Channel100V(D-S)MOSFET

MSD20N10

N-Channel100-V(D-S)MOSFET

MTE20N10FP

N-ChannelEnhancementModePowerMOSFET

MTP20N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP20N10

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●