ADL8121ACPZN-R7RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

ADL8121ACPZN-R7属于RF/IF射频/中频RFID的射频放大器。由亚德诺半导体技术有限公司制造生产的ADL8121ACPZN-R7射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。

GENERAL DESCRIPTION

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 0.025 GHz to 12 GHz.

The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical

noise figure, and a typical output third-order intercept (OIP3) of

36 dBm across the 0.025 GHz to 10 GHz frequency range, requiring

only 95 mA from a 5 V supply voltage. The saturated output

power (PSAT) of 21.5 dBm typical across the 0.025 GHz to

10 GHz frequency range enables the low noise amplifier (LNA)

to function as a local oscillator (LO) driver for many of Analog

Devices, Inc., balanced, in-phase and quadrature (I/Q) or image

rejection mixers.

The ADL8121 also features inputs and outputs that are internally

matched to 50 Ω, making the device ideal for surface-mounted

technology (SMT)-based and is housed in a RoHS-compliant, 2 mm

× 2 mm, 6-lead LFCSP.

FEATURES

► Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz

► Single positive supply (self biased)

► High gain: 16.5 dB typical at 0.025 GHz to 10 GHz

► High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz

► RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

APPLICATIONS

► Test instrumentation

► Military communications

► Military radar

► Telecommunications