CMOS Low Voltage 2.5 OHM Dual SPDT Switch

GENERAL DESCRIPTION The ADG736L is a monolithic device comprising two independ ently selectable CMOS single pole, double throw (SPDT) switches. The switches are designed using a submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, low leakage

文件：269.13 Kbytes 页数：12 Pages

AD

亚德诺

CMOS Low Voltage 2.5 OHM Dual SPDT Switch

GENERAL DESCRIPTION The ADG736L is a monolithic device comprising two independ ently selectable CMOS single pole, double throw (SPDT) switches. The switches are designed using a submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, low leakage

文件：269.13 Kbytes 页数：12 Pages

AD

亚德诺

CMOS Low Voltage 2.5 OHM Dual SPDT Switch

GENERAL DESCRIPTION The ADG736L is a monolithic device comprising two independ ently selectable CMOS single pole, double throw (SPDT) switches. The switches are designed using a submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, low leakage

文件：269.13 Kbytes 页数：12 Pages

AD

亚德诺

isc Silicon PNP Power Transistor

文件：244.97 Kbytes 页数：2 Pages

ISC

无锡固电

Top Emitting SMT LED Components

Features: 1. Emitted Color : Super Yellow 2. Lens Appearance : Water Clear 3. Mono-color type. 4. 1.6x0.8x0.8mm(0603) standard package 5. Suitable for all SMT assembly methods. 6. Compatible with infrared and vapor phase reflow solder process. 7. Compatible with automatic placement equipm

文件：231.02 Kbytes 页数：7 Pages

AmericanBright

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

文件：629.5 Kbytes 页数：2 Pages

Central