1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

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1 pC电荷注入、100 pA泄漏电流、CMOS、±5 V/5 V/3 V、四通道单刀单掷开关

ADG613-EP是一款单芯片CMOS器件，内置四个独立可选的开关。此开关在整个输入信号范围内具有1 pC的超低电荷注入，25°C时的典型漏电流为0.01 nA。\n\n 额定电源电压为±5 V、+5 V和3 V。它内置四个独立的单刀单掷(SPST)开关。ADG613-EP内置具有数字控制逻辑的两个开关，逻辑低电平时导通；另有两个开关则采用反相逻辑。\n\n 当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG613-EP为先开后合式开关。\n\n ADG613-EP采用小型16引脚TSSOP封装。\n\n 此外，ADG61 • 1 pC电荷注入\n\n• ±2.7 V至±5.5 V双电源供电\n\n• +2.7 V至+5.5 V单电源供电\n\n• 汽车应用温度范围：–40°C至+125°C\n\n• 泄漏电流：100 pA（最大值，25°C）\n\n• 导通电阻：85 Ω\n\n• 轨到轨开关工作\n\n• 快速开关时间\n\n• 16引脚TSSOP和SOIC封装\n\n• 典型功耗：<0.1 μW\n\n• TTL-/CMOS-兼容型输入;

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1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

文件：152.56 Kbytes 页数：12 Pages

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1 pC Charge Injection, 100 pA Leakage

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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