首页 >ADG438FBZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SitaraProcessorsTechnicalBrief | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB438usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOB438isPb-free(meetsROHS&Sony259specifications).AOB4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB438usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOB438isPb-free(meetsROHS&Sony259specifications).AOB4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD438usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOD438isPb-free(meetsROHS&Sony259specificat | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD438usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOD438isPb-free(meetsROHS&Sony259specificat | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU438usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU438isPb-free(meetsROHS&Sony259specificatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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