Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables th

文件：453.75 Kbytes 页数：16 Pages

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2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables th

文件：453.75 Kbytes 页数：16 Pages

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2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables th

文件：453.75 Kbytes 页数：16 Pages

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Low Capacitance, 16- and 8-Channel -15 V/12 V iCMOS Multiplexers

GENERAL DESCRIPTION The ADG1206 and ADG1207 are monolithic iCMOS® analog multiplexers comprising sixteen single channels and eight differential channels, respectively. The ADG1206 switches one of sixteen inputs to a common output, as determined by the 4-bit binary address lines A0, A1, A2, and A3

文件：483.16 Kbytes 页数：20 Pages

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