ADD8616A8A中文资料威刚科技数据手册PDF规格书

General Description

The ADD8616A8A are four-bank Double Data Rate(DDR) Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.   

Data outputs occur at both rising edges of CK and /CK.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features

• 2.5V for VDDQ power supply

• SSTL_2 interface

• MRS Cycle with address key programs

    -CAS Latency (2, 2.5)

    -Burst Length (2,4 &8)

    -Burst Type (sequential & Interleave)

• 4 banks operation

• Differential clock input (CK, /CK) operation

• Double data rate interface

• Auto & Self refresh

• 8192 refresh cycle

• DQM for masking

• Package:66-pins 400 mil TSOP-Type II