BC848

GeneralPurposeTransistor

BC848

NPN/PNPDualGeneralPurposeTransistors

BC848

NPNGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT225mWatts FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •IncompliancewithEURoHS2002/95/ECdirectives

BC848

EPITAXIALPLANARNPNTRANSISTOR

BC848

SOT-23-PowerTransistorandDarlingtons

BC848

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

BC848

NPNEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

BC848

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

•Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC848

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BC848

NPNSILICONTRANSISTOR

Features ●Powerdissipation PCM:0.3W(Tamb=25°C) ●PluseDrain ICM:0.1mA ●ReverseVoltage V(BR)CBO:BC84680V BC84750V BC84830V ●Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C