ADP2300

1.2A,20V,700kHz/1.4MHz,NonsynchronousStep-DownRegulator

GENERALDESCRIPTION TheADP2300/ADP2301arecompact,constant-frequency,current-mode,step-downdc-to-dcregulatorswithintegratedpowerMOSFET.TheADP2300/ADP2301devicesrunfrominputvoltagesof3.0Vto20V,makingthemsuitableforawiderangeofapplications.Aprecise,lowvoltagein

ADP2300-EVALZ

1.2A,20V,700kHz/1.4MHz,NonsynchronousStep-DownRegulator

GENERALDESCRIPTION TheADP2300/ADP2301arecompact,constant-frequency,current-mode,step-downdc-to-dcregulatorswithintegratedpowerMOSFET.TheADP2300/ADP2301devicesrunfrominputvoltagesof3.0Vto20V,makingthemsuitableforawiderangeofapplications.Aprecise,lowvoltagein

AIC2300

400mASynchronousPWMStep-Down

AK2300

3.3VSinglechannelPCMCODECLSI

GENERALDESCRIPTION TheAK2300isasinglechannelPCMCODECforvariousapplicationsforexample,AFE.ItincludestheselectablelinearPCMinterface,A/m-lawfunction,muteandpowerdown.Allofthesefunctionsarecontrolledbythepin. ItincludesBandlimitingfilter,A/DandD/Aconverte

AM2300

MOSFET20VN-CHANNELENHANCEMENTMODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

AM2300N

N-Channel20-V(D-S)MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.TypicalapplicationsareDC-DCconverters,powermanagementinportableandbattery-poweredproducts

AMS2300

transistor

DESCRIPTION TheAMS2300istheN-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity,DMOStrenchtechnology. Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageapplic

AN2300

AnalternativesolutiontoCapacitivepower

AP2300GN-HF

N-Channel20V(D-S)MOSFET

APM2300A

N-ChannelEnhancementModeMOSFET

Features •20V/6A,RDS(ON)=25mΩ(typ.)@VGS=10V RDS(ON)=32mΩ(typ.)@VGS=4.5V RDS(ON)=40mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookCompute