Six Channel Integrated Power Management IC for Handheld Portable Equipment

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ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

Six Channel Integrated Power Management IC for Handheld Portable Equipment

文件：692.37 Kbytes 页数：34 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

N-Channel PowerTrench짰 MOSFET 25V, 35A, 5.7mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=35A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

25V N -Channel MOSFET

Features Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V Low gate resistance VDS(V) =25V ID =35A (VGS = 10V) RDS(ON)

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UMW

友台半导体