丝印：ACT253M；Package：SOIC；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

文件：291.49 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ACT253M；Package：SOIC；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

文件：291.49 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ACT253M；Package：SOIC；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

文件：291.49 Kbytes 页数：14 Pages

TI

德州仪器

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