丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：462.81 Kbytes 页数：13 Pages

TI

德州仪器

丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：462.81 Kbytes 页数：13 Pages

TI

德州仪器

丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：462.81 Kbytes 页数：13 Pages

TI

德州仪器

SOP16

TI

德州仪器

上传：深圳市佳杰伟业科技有限公司

16-SOIC

TI/德州仪器

上传：深圳诚思涵科技有限公司