HEX INVERTERS WITH OPEN-DRAIN OUTPUTS

文件：328.38 Kbytes 页数：8 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器