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ACT-SF512K32N-26F2I规格书详情
FEATURES
■ 4 – 512K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM
■ Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)
■ Organized as 512K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus
■ Low Power CMOS
■ Input and Output TTL Compatible Design
■ MIL-PRF-38534 Compliant MCMs Available
■ Decoupling Capacitors and Multiple Grounds for Low Noise
■ Commercial, Industrial and Military Temperature Ranges
■ Industry Standard Pinouts
■ TTL Compatible Inputs and Outputs
■ Packaging – Hermetic Ceramic
● 66–Lead, PGA-Type, 1.385SQ x 0.245max, Aeroflex code# P1,P5 with/without shoulders)
● 68–Lead, Dual-Cavity CQFP(F2), 0.88SQ x .20max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99SQ CQFJ footprint)
FLASH MEMORY FEATURES
■ Sector Architecture (Each Die)
● 8 Equal Sectors of 64K bytes each
● Any combination of sectors can be erased with one command sequence
■ +5V Programing, +5V Supply
■ Embedded Erase and Program Algorithms
■ Hardware and Software Write Protection
■ Page Program Operation and Internal Program Control Time.
■ 10,000 Erase/Program Cycles