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ACT-SF128K32N-39P1I中文资料PDF规格书
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ACT-SF128K32N-39P1I规格书详情
FEATURES
■ 4 – 128K x 8 SRAMs & 4 – 128K x 8 Flash Die in One MCM
■ Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70ns or 90ns (Flash)
■ Organized as 128K x 32 of SRAM and 128K x 32 of Flash Memory with Common Data Bus
■ Low Power CMOS
■ Input and Output TTL Compatible Design
■ MIL-PRF-38534 Compliant MCMs Available
■ Decoupling Capacitors and Multiple Grounds for Low Noise
■ Commercial, Industrial and Military Temperature Ranges
■ Industry Standard Pinouts
■ TTL Compatible Inputs and Outputs
■ Packaging – Hermetic Ceramic
● 66–Lead, PGA-Type, 1.385SQ x 0.245max, Aeroflex code# P3,P7 without/with shoulders
FLASH MEMORY FEATURES
■ Sector Architecture (Each Die)
● 8 Equal Sectors of 16K bytes each
● Any combination of sectors can be erased with one command sequence.
■ +5V Programing, +5V Supply
■ Embedded Erase and Program Algorithms
■ Hardware and Software Write Protection
■ Page Program Operation and Internal Program Control Time.
■ 10,000 Erase/Program Cycles
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AEROFLEX |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 |