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ACS04DSLASHSAMPLE-03中文资料瑞萨数据手册PDF规格书
ACS04DSLASHSAMPLE-03规格书详情
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEU Immunity. . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . . . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . 8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . .100A (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 15ns (Max)