Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

• VDS(V)=-320V, ID=-5.24.1A

• RDS(ON)=51mΩ @ VGS=-10V

• RDS(ON)=68mΩ @ VGS=-4.5V

• High density cell design for low RDS(ON)