Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its

文件：668.41 Kbytes 页数：6 Pages

ACE

MOSFET

ACE ele

Eight Channel ActivePath??Power Management IC

GENERAL DESCRIPTION The patent-pending ACT8810 is a complete, cost effective, highly-efficient ActivePMUTM power management solution that is ideal for a wide range of high performance portable handheld applications such as personal navigation devices (PNDs). This device integrates the ActivePathT

文件：150.22 Kbytes 页数：2 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

Eight Channel ActivePath??Power Management IC

文件：760.82 Kbytes 页数：53 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

Eight Channel ActivePathTM Power Management IC

文件：889.97 Kbytes 页数：52 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司