P-Channel Enhancement Mode MOSFET

文件：261.019 Kbytes 页数：5 Pages

ACE

P-Channel Enhancement Mode MOSFET

Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.     Features • VDS=-20V • RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ • RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ • Advanced trench process technology •

文件：97.51 Kbytes 页数：5 Pages

ACE

P-Channel Enhancement Mode MOSFET

文件：267.94 Kbytes 页数：5 Pages

ACE

MOSFET

Features - AEC-Q101 Qualified. - Advanced trench process technology. - Load switching for portable applications.

文件：507.54 Kbytes 页数：5 Pages

COMCHIP

典琦

P-Channel Enhancement Mode Field Effect Transistor

文件：840.4 Kbytes 页数：5 Pages

ADV

爱德微

1.2 A, 20 V, 700 kHz/1.4 MHz, Nonsynchronous Step-Down Regulator

GENERAL DESCRIPTION The ADP2300/ADP2301 are compact, constant-frequency, current-mode, step-down dc-to-dc regulators with integrated power MOSFET. The ADP2300/ADP2301 devices run from input voltages of 3.0 V to 20 V, making them suitable for a wide range of applications. A precise, low voltage in

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AD

亚德诺