丝印：AC20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and

文件：478.09 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AC20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and

文件：478.09 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AC20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and

文件：478.09 Kbytes 页数：15 Pages

TI

德州仪器

丝印：AC20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and

文件：478.09 Kbytes 页数：15 Pages

TI

德州仪器